Effects of Na2S and (NH4)2S Edge Passivation Treatments on the Dark Current-Voltage Characteristics of GaAs pn Diodes

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)2157-2159
    Number of pages3
    JournalApplied Physics Letters
    Issue number25
    StatePublished - 1988

    Bibliographical note

    Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-10688

    Cite this