Effects of Oxygen Contamination on Diffusion Length in p+--n GaInNAs Solar Cells

A. Balcioglu; R. K. Ahrenkiel; D. J. Friedman

doi:10.1063/1.1542937

Effects of Oxygen Contamination on Diffusion Length in p+--n GaInNAs Solar Cells

A. Balcioglu, R. K. Ahrenkiel, D. J. Friedman

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus Citations

Abstract

The effects of deep-level impurities on the hole diffusion length in p⁺-n GaInNAs solar cells were studied using secondary ion mass spectroscopy (SIMS), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS). It was found that the hole diffusion length is strongly dependent on the concentration of the oxygen recombination center. It is concluded that oxygen recombination center is a lifetime-limiting defect and therefore controls the hole diffusion length.

Original language	American English
Pages (from-to)	3635-3642
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1542937 https://doi.org/10.1063/1.1542937
State	Published - 2003

NREL Publication Number

NREL/JA-520-34417

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title = "Effects of Oxygen Contamination on Diffusion Length in p+--n GaInNAs Solar Cells",

abstract = "The effects of deep-level impurities on the hole diffusion length in p+-n GaInNAs solar cells were studied using secondary ion mass spectroscopy (SIMS), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS). It was found that the hole diffusion length is strongly dependent on the concentration of the oxygen recombination center. It is concluded that oxygen recombination center is a lifetime-limiting defect and therefore controls the hole diffusion length.",

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AU - Ahrenkiel, R. K.

AU - Friedman, D. J.

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AB - The effects of deep-level impurities on the hole diffusion length in p+-n GaInNAs solar cells were studied using secondary ion mass spectroscopy (SIMS), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS). It was found that the hole diffusion length is strongly dependent on the concentration of the oxygen recombination center. It is concluded that oxygen recombination center is a lifetime-limiting defect and therefore controls the hole diffusion length.

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M3 - Article

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JO - Journal of Applied Physics

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Effects of Oxygen Contamination on Diffusion Length in p+--n GaInNAs Solar Cells

Abstract

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