Effects of Processing on the Electronic Defect Levels in CuInSe2

H. R. Moutinho; D. J. Dunalvy; L. L. Kazmerski; R. K. Ahrenkeil; F. A. ABou-Elfotouch

Effects of Processing on the Electronic Defect Levels in CuInSe2

H. R. Moutinho, D. J. Dunalvy, L. L. Kazmerski, R. K. Ahrenkeil, F. A. ABou-Elfotouch

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

The effects of CuInSe₂ preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe₂. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures.

Original language	American English
Pages	572-576
Number of pages	5
State	Published - 1993
Event	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993

Conference

Conference	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
City	Louisville, KY, USA
Period	10/05/93 → 14/05/93

NREL Publication Number

ACNR/CP-412-13681

Cite this

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title = "Effects of Processing on the Electronic Defect Levels in CuInSe2",

abstract = "The effects of CuInSe2 preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe2. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures.",

author = "Moutinho, {H. R.} and Dunalvy, {D. J.} and Kazmerski, {L. L.} and Ahrenkeil, {R. K.} and ABou-Elfotouch, {F. A.}",

year = "1993",

language = "American English",

pages = "572--576",

note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",

}

TY - CONF

T1 - Effects of Processing on the Electronic Defect Levels in CuInSe2

AU - Moutinho, H. R.

AU - Dunalvy, D. J.

AU - Kazmerski, L. L.

AU - Ahrenkeil, R. K.

AU - ABou-Elfotouch, F. A.

PY - 1993

Y1 - 1993

N2 - The effects of CuInSe2 preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe2. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures.

AB - The effects of CuInSe2 preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe2. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures.

UR - http://www.scopus.com/inward/record.url?scp=0027815004&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0027815004

SP - 572

EP - 576

T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference

Y2 - 10 May 1993 through 14 May 1993

ER -

Effects of Processing on the Electronic Defect Levels in CuInSe2

Abstract

Conference

NREL Publication Number

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