Effects of Processing on the Electronic Defect Levels in CuInSe2

H. R. Moutinho, D. J. Dunalvy, L. L. Kazmerski, R. K. Ahrenkeil, F. A. ABou-Elfotouch

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations


The effects of CuInSe2 preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe2. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures.

Original languageAmerican English
Number of pages5
StatePublished - 1993
EventProceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA
Duration: 10 May 199314 May 1993


ConferenceProceedings of the 23rd IEEE Photovoltaic Specialists Conference
CityLouisville, KY, USA

NREL Publication Number

  • ACNR/CP-412-13681


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