Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

Timothy Gessert, Darius Kuciauskas, Helio Moutinho, Stuart Farrell, Teresa Barnes, Eric Colegrove, Brian Stafford, Wei Gao, Siva Sivananthan

Research output: Contribution to conferencePaperpeer-review


Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (< ∼10 μm). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

Original languageAmerican English
Number of pages5
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-63560


  • cadmium telluride
  • characterization
  • heteroepilayers
  • photovoltaic device
  • silicon
  • stoichiometry


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