Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

Timothy Gessert; Darius Kuciauskas; Helio Moutinho; Stuart Farrell; Teresa Barnes; Eric Colegrove; Brian Stafford; Wei Gao; Siva Sivananthan

doi:10.1109/PVSC.2015.7356368

Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

Timothy Gessert, Darius Kuciauskas, Helio Moutinho, Stuart Farrell, Teresa Barnes, Eric Colegrove, Brian Stafford, Wei Gao, Siva Sivananthan

University of Illinois at Chicago

Research output: Contribution to conference › Paper › peer-review

Abstract

Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (< ∼10 μm). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

Original language	American English
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2015.7356368 https://doi.org/10.1109/PVSC.2015.7356368
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5K00-63560

Keywords

cadmium telluride
characterization
heteroepilayers
photovoltaic device
silicon
stoichiometry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Gessert, T., Kuciauskas, D., Moutinho, H., Farrell, S., Barnes, T., Colegrove, E., Stafford, B., Gao, W., & Sivananthan, S. (2015). Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356368, https://doi.org/10.1109/PVSC.2015.7356368

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abstract = "Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (< ∼10 μm). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.",

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author = "Timothy Gessert and Darius Kuciauskas and Helio Moutinho and Stuart Farrell and Teresa Barnes and Eric Colegrove and Brian Stafford and Wei Gao and Siva Sivananthan",

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Gessert, T, Kuciauskas, D, Moutinho, H, Farrell, S, Barnes, T , Colegrove, E, Stafford, B, Gao, W & Sivananthan, S 2015, 'Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356368, https://doi.org/10.1109/PVSC.2015.7356368

TY - CONF

T1 - Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

AU - Gessert, Timothy

AU - Kuciauskas, Darius

AU - Moutinho, Helio

AU - Farrell, Stuart

AU - Barnes, Teresa

AU - Colegrove, Eric

AU - Stafford, Brian

AU - Gao, Wei

AU - Sivananthan, Siva

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (< ∼10 μm). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

AB - Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (< ∼10 μm). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

KW - cadmium telluride

KW - characterization

KW - heteroepilayers

KW - photovoltaic device

KW - silicon

KW - stoichiometry

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U2 - 10.1109/PVSC.2015.7356368

DO - 10.1109/PVSC.2015.7356368

M3 - Paper

AN - SCOPUS:84961616411

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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