Effects of Substrate and Concentration on Device Properties, Junction Formation, and Film Microstructure in CuInSe2 PV Devices

Research output: Contribution to conferencePaper

Abstract

Different concentrations of Na were systematically introduced into CuInSe2 (CIS) photovoltaic solar cell absorber material on different substrates (SLG, Si02/SLG, 7059, alumina) to: 1) determine the resultant effects on device properties, junction formation, and material microstructure; and 2) determine the optimal range of Na concentrations in the CIS films per specific substrate. In general,finished devices show improved Voc, Jsc, and device efficiency, improved charge-collection efficiency and, possibly, increased grain size as a result of the coevaportion of 4 to 100 mg of Na2Se during film deposition. However, a dramatic devolution set in with the addition of 235 mg of Na2Se, and all the aforementioned parameters were either at, or worse than, their pre-Na-addition levels.Meanwhile, although the device microstructure improves with Na addition and, more importantly, the junction (as characterized by electron-beam-induced current) has become much more uniform and closer to the heteroface, all that reverses with the 'Na overdose.'
Original languageAmerican English
Number of pages10
StatePublished - 1998
EventNational Center for Photovolatics Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovolatics Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25682

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