Effects of Substrate Orientation on Aluminum Grown on MgAl2O4 Spinel Using Molecular Beam Epitaxy

Y. Lin, A. G. Norman, W. E. Mcmahon, H. R. Moutinho, C. S. Jiang, A. J. Ptak

Research output: Contribution to journalArticlepeer-review

Abstract

Al thin films have been grown on single-crystal MgAl2O 4 spinel substrates using solid source molecular beam epitaxy. The structural properties of Al layers were systematically investigated as a function of substrate orientation. X-ray diffraction reveals that Al layers are coherently grown on both (0 0 1)- and (1 1 1)-oriented spinel substrates. However, scanning electron microscopy and atomic force microscopy show that Al layers on (0 0 1) spinel substrates display smoother surface morphology than those grown on (1 1 1) spinel substrates. Additionally, electron backscatter diffraction and transmission electron microscopy demonstrate the presence of a high density of twin domain structures in Al thin films grown on (1 1 1) spinel substrates.

Original languageAmerican English
Pages (from-to)298-301
Number of pages4
JournalJournal of Crystal Growth
Volume314
Issue number1
DOIs
StatePublished - 1 Jan 2011

NREL Publication Number

  • NREL/JA-5200-49902

Keywords

  • metals
  • molecular beam epitaxy
  • oxides
  • planar defects

Fingerprint

Dive into the research topics of 'Effects of Substrate Orientation on Aluminum Grown on MgAl2O4 Spinel Using Molecular Beam Epitaxy'. Together they form a unique fingerprint.

Cite this