Abstract
Al thin films have been grown on single-crystal MgAl2O 4 spinel substrates using solid source molecular beam epitaxy. The structural properties of Al layers were systematically investigated as a function of substrate orientation. X-ray diffraction reveals that Al layers are coherently grown on both (0 0 1)- and (1 1 1)-oriented spinel substrates. However, scanning electron microscopy and atomic force microscopy show that Al layers on (0 0 1) spinel substrates display smoother surface morphology than those grown on (1 1 1) spinel substrates. Additionally, electron backscatter diffraction and transmission electron microscopy demonstrate the presence of a high density of twin domain structures in Al thin films grown on (1 1 1) spinel substrates.
Original language | American English |
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Pages (from-to) | 298-301 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 314 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2011 |
NREL Publication Number
- NREL/JA-5200-49902
Keywords
- metals
- molecular beam epitaxy
- oxides
- planar defects