Effects of Substrate Orientation on Aluminum Grown on MgAl2O4 Spinel Using Molecular Beam Epitaxy

Research output: Contribution to journalArticlepeer-review

Abstract

Al thin films have been grown on single-crystal MgAl2O 4 spinel substrates using solid source molecular beam epitaxy. The structural properties of Al layers were systematically investigated as a function of substrate orientation. X-ray diffraction reveals that Al layers are coherently grown on both (0 0 1)- and (1 1 1)-oriented spinel substrates. However, scanning electron microscopy and atomic force microscopy show that Al layers on (0 0 1) spinel substrates display smoother surface morphology than those grown on (1 1 1) spinel substrates. Additionally, electron backscatter diffraction and transmission electron microscopy demonstrate the presence of a high density of twin domain structures in Al thin films grown on (1 1 1) spinel substrates.

Original languageAmerican English
Pages (from-to)298-301
Number of pages4
JournalJournal of Crystal Growth
Volume314
Issue number1
DOIs
StatePublished - 1 Jan 2011

NREL Publication Number

  • NREL/JA-5200-49902

Keywords

  • metals
  • molecular beam epitaxy
  • oxides
  • planar defects

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