Effects of Substrate Temperature and Gas Phase Chemistry on the APCVD of a-Si:H Films from Disilane

Effects of Substrate Temperature and Gas Phase Chemistry on the APCVD of a-Si:H Films from Disilane

Research output: Contribution to conference › Paper

Original language	American English
Pages	97-102
Number of pages	6
State	Published - 1988
Event	MRS Spring Meeting - Reno, Nevada Duration: 5 Apr 1988 → 8 Apr 1988

Conference

Conference	MRS Spring Meeting
City	Reno, Nevada
Period	5/04/88 → 8/04/88

Bibliographical note

Work performed by Department of Chemistry, Harvard University, Cambridge, Massachusetts

NREL Publication Number

ACNR/CP-10493

Cite this

@conference{bd2acdfa7c964773bce93b0d718151e6,

title = "Effects of Substrate Temperature and Gas Phase Chemistry on the APCVD of a-Si:H Films from Disilane",

author = "NREL",

note = "Work performed by Department of Chemistry, Harvard University, Cambridge, Massachusetts; MRS Spring Meeting ; Conference date: 05-04-1988 Through 08-04-1988",

year = "1988",

language = "American English",

pages = "97--102",

}