Abstract
Charge-collection microscopy (CCM) - commonly known as electron-beam-induced current [EBIC] microscopy - in a scanning electron microscope (SEM) was used to obtain charge-collection efficiency profiles of cleaved thin-film ZnO/CdS/CuInxGa1-xSe2/Mo photovoltaic devices on glass substrates, with x varied between 0 and 100%. We observed considerable variation in the EBIC peak position, the uniformity (between and within devices), and overall charge-collection profile of the junction as a function of Ga concentration. Whereas using only CuInSe2 (CIS) absorber material results in a rather wide and buried junction in the CIS, the systematic addition of Ga to the p-CuInSe2 matrix affects the conductivity type of the material, thereby creating an increasingly abrupt, uniform, and shallow junction near the heteroface. Although the substitution of Ga for In improves overall device performance up to approximately X = 25% and the Voc continues to improve, the JSC, FF, and device efficiency degrade with additional Ga.
| Original language | American English |
|---|---|
| Pages | 183-188 |
| Number of pages | 6 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996 |
Conference
| Conference | Proceedings of the 1996 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 8/04/96 → 11/04/96 |
NREL Publication Number
- NREL/CP-412-21008
