Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

Glenn Teeter; Steven Harvey; Steven Johnston

doi:10.1109/PVSC.2016.7750018

Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

Glenn Teeter, Steven Harvey, Steven Johnston

Materials Science

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ∼10¹⁴ cm^-3 to ∼10¹⁷ cm^-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

Original language	American English
Pages	2169-2173
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2016.7750018 https://doi.org/10.1109/PVSC.2016.7750018
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5K00-65789

Keywords

CIGS
CZTS
CZTSe
detailed balance
metastabilities
microscopic reversibility
photovoltaic cells
point defects

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells",

abstract = "We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ∼1014 cm-3 to ∼1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.",

keywords = "CIGS, CZTS, CZTSe, detailed balance, metastabilities, microscopic reversibility, photovoltaic cells, point defects",

author = "Glenn Teeter and Steven Harvey and Steven Johnston",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750018",

language = "American English",

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T1 - Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

AU - Teeter, Glenn

AU - Harvey, Steven

AU - Johnston, Steven

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ∼1014 cm-3 to ∼1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

AB - We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ∼1014 cm-3 to ∼1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

KW - CIGS

KW - CZTS

KW - CZTSe

KW - detailed balance

KW - metastabilities

KW - microscopic reversibility

KW - photovoltaic cells

KW - point defects

UR - http://www.scopus.com/inward/record.url?scp=85003756279&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7750018

DO - 10.1109/PVSC.2016.7750018

M3 - Paper

AN - SCOPUS:85003756279

SP - 2169

EP - 2173

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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