Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells

Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	Vol. 2: 764-767
Number of pages	4
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, Hawaii Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)
City	Waikoloa, Hawaii
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-41297

Cite this

@conference{28de3add42c84647b826decc3c742d98,

title = "Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells",

author = "NREL",

year = "2006",

language = "American English",

pages = "Vol. 2: 764--767",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) ; Conference date: 07-05-2006 Through 12-05-2006",

}

TY - CONF

T1 - Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells

AU - NREL, null

PY - 2006

Y1 - 2006

M3 - Paper

SP - Vol. 2: 764-767

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)

Y2 - 7 May 2006 through 12 May 2006

ER -