Efficiency Improvements in GaAs-on-Si Solar Cells

S. M. Vernon; S. P. Tobin; V. E. Haven; C. Bajgar; T. M. Dixon; M. M. Al-Jassim; R. K. Ahrenkiel; K. A. Emery

doi:10.1109/pvsc.1988.105704

Efficiency Improvements in GaAs-on-Si Solar Cells

S. M. Vernon, S. P. Tobin, V. E. Haven, C. Bajgar, T. M. Dixon, M. M. Al-Jassim, R. K. Ahrenkiel, K. A. Emery

Spire Corporation

Research output: Contribution to conference › Paper › peer-review

15 Scopus Citations

Abstract

The thermal cycle growth (TCG) method is shown to be effective in improving GaAs/Si photovoltaic performance. Transmission electron microscope studies revealed that dislocation densities were reduced by approximately an order of magnitude and minority-carrier lifetimes increased by more than a factor of two. The efficiency of GaAs-on-Si cells were increased from 11.2% to 17.6% (one-sun) and from 13.9% to 18.5% (concentrated light) by use of the TCG technique. Improvements in basic GaAs cell growth and processing technology were also responsible for a portion of these increases, as GaAs/GaAs control cell efficiencies climbed from 21.3 to 24.3% over the span of these experiments.

Original language	American English
Pages	481-485
Number of pages	5
DOIs	https://doi.org/10.1109/pvsc.1988.105704
State	Published - 1988
Externally published	Yes
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 26 Sep 1988 → 30 Sep 1988

Conference

Conference	Twentieth IEEE Photovoltaic Specialists Conference - 1988
City	Las Vegas, NV, USA
Period	26/09/88 → 30/09/88

NREL Publication Number

ACNR/CP-213-11101

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/pvsc.1988.105704

Cite this

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title = "Efficiency Improvements in GaAs-on-Si Solar Cells",

abstract = "The thermal cycle growth (TCG) method is shown to be effective in improving GaAs/Si photovoltaic performance. Transmission electron microscope studies revealed that dislocation densities were reduced by approximately an order of magnitude and minority-carrier lifetimes increased by more than a factor of two. The efficiency of GaAs-on-Si cells were increased from 11.2% to 17.6% (one-sun) and from 13.9% to 18.5% (concentrated light) by use of the TCG technique. Improvements in basic GaAs cell growth and processing technology were also responsible for a portion of these increases, as GaAs/GaAs control cell efficiencies climbed from 21.3 to 24.3% over the span of these experiments.",

author = "Vernon, {S. M.} and Tobin, {S. P.} and Haven, {V. E.} and C. Bajgar and Dixon, {T. M.} and Al-Jassim, {M. M.} and Ahrenkiel, {R. K.} and Emery, {K. A.}",

year = "1988",

doi = "10.1109/pvsc.1988.105704",

language = "American English",

pages = "481--485",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

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T1 - Efficiency Improvements in GaAs-on-Si Solar Cells

AU - Vernon, S. M.

AU - Tobin, S. P.

AU - Haven, V. E.

AU - Bajgar, C.

AU - Dixon, T. M.

AU - Al-Jassim, M. M.

AU - Ahrenkiel, R. K.

AU - Emery, K. A.

PY - 1988

Y1 - 1988

N2 - The thermal cycle growth (TCG) method is shown to be effective in improving GaAs/Si photovoltaic performance. Transmission electron microscope studies revealed that dislocation densities were reduced by approximately an order of magnitude and minority-carrier lifetimes increased by more than a factor of two. The efficiency of GaAs-on-Si cells were increased from 11.2% to 17.6% (one-sun) and from 13.9% to 18.5% (concentrated light) by use of the TCG technique. Improvements in basic GaAs cell growth and processing technology were also responsible for a portion of these increases, as GaAs/GaAs control cell efficiencies climbed from 21.3 to 24.3% over the span of these experiments.

AB - The thermal cycle growth (TCG) method is shown to be effective in improving GaAs/Si photovoltaic performance. Transmission electron microscope studies revealed that dislocation densities were reduced by approximately an order of magnitude and minority-carrier lifetimes increased by more than a factor of two. The efficiency of GaAs-on-Si cells were increased from 11.2% to 17.6% (one-sun) and from 13.9% to 18.5% (concentrated light) by use of the TCG technique. Improvements in basic GaAs cell growth and processing technology were also responsible for a portion of these increases, as GaAs/GaAs control cell efficiencies climbed from 21.3 to 24.3% over the span of these experiments.

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U2 - 10.1109/pvsc.1988.105704

DO - 10.1109/pvsc.1988.105704

M3 - Paper

AN - SCOPUS:0024184709

SP - 481

EP - 485

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Efficiency Improvements in GaAs-on-Si Solar Cells

Abstract

Conference

NREL Publication Number

UN SDGs

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