Efficiency Improvements in GaAs-on-Si Solar Cells

S. M. Vernon, S. P. Tobin, V. E. Haven, C. Bajgar, T. M. Dixon, M. M. Al-Jassim, R. K. Ahrenkiel, K. A. Emery

Research output: Contribution to conferencePaperpeer-review

15 Scopus Citations


The thermal cycle growth (TCG) method is shown to be effective in improving GaAs/Si photovoltaic performance. Transmission electron microscope studies revealed that dislocation densities were reduced by approximately an order of magnitude and minority-carrier lifetimes increased by more than a factor of two. The efficiency of GaAs-on-Si cells were increased from 11.2% to 17.6% (one-sun) and from 13.9% to 18.5% (concentrated light) by use of the TCG technique. Improvements in basic GaAs cell growth and processing technology were also responsible for a portion of these increases, as GaAs/GaAs control cell efficiencies climbed from 21.3 to 24.3% over the span of these experiments.

Original languageAmerican English
Number of pages5
StatePublished - 1988
Externally publishedYes
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 26 Sep 198830 Sep 1988


ConferenceTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA

NREL Publication Number

  • ACNR/CP-213-11101


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