Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells

Lorelle Mansfield, Steven Harvey, Stephen Glynn, Ingrid Repins, Ana Kanevce, Karen Bowers, Carolyn Beall

Research output: Contribution to journalArticlepeer-review

49 Scopus Citations


We improved the efficiency of ultra-thin (0.49-μm-thick) Cu(In,Ga)Se2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3-stage process but did not add post-deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron-hole recombination at the interface. We discuss device measurements and film characterization for ultra-thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 μm.

Original languageAmerican English
Pages (from-to)949-954
Number of pages6
JournalProgress in Photovoltaics: Research and Applications
Issue number11
StatePublished - 2018

Bibliographical note

Publisher Copyright:
Copyright © 2018 John Wiley & Sons, Ltd.

NREL Publication Number

  • NREL/JA-5K00-70468


  • Cu(In,Ga)Se (CIGS)
  • current-voltage characteristics
  • photovoltaic cells
  • semiconductor device modeling
  • thin films


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