Efficient and Scalable GaInAs Thermophotovoltaic Devices

Eric J. Tervo; Ryan M. France; Daniel J. Friedman; Madhan K. Arulanandam; Richard R. King; Tarun C. Narayan; Cecilia Luciano; Dustin P. Nizamian; Benjamin A. Johnson; Alexandra R. Young; Leah Y. Kuritzky; Emmett E. Perl; Moritz Limpinsel; Brendan M. Kayes; Andrew J. Ponec; David M. Bierman; Justin A. Briggs; Myles A. Steiner

doi:10.1016/j.joule.2022.10.002

Efficient and Scalable GaInAs Thermophotovoltaic Devices

Eric J. Tervo, Ryan M. France, Daniel J. Friedman, Madhan K. Arulanandam, Richard R. King, Tarun C. Narayan, Cecilia Luciano, Dustin P. Nizamian, Benjamin A. Johnson, Alexandra R. Young, Leah Y. Kuritzky, Emmett E. Perl, Moritz Limpinsel, Brendan M. Kayes, Andrew J. Ponec, David M. Bierman, Justin A. Briggs, Myles A. Steiner

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

22 Scopus Citations

Abstract

Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm²), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% ± 2.0% and an electrical power density of 3.78 W/cm² at an emitter temperature of 1,850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

Original language	American English
Pages (from-to)	2566-2584
Number of pages	19
Journal	Joule
Volume	6
Issue number	11
DOIs	https://doi.org/10.1016/j.joule.2022.10.002 https://doi.org/10.1016/j.joule.2022.10.002
State	Published - 2022

Bibliographical note

See NREL/JA-5900-83369 for preprint

NREL Publication Number

NREL/JA-5900-84599

Keywords

energy
III-V semiconductor
photovoltaic
thermal radiation
thermophotovoltaic

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Tervo, E. J., France, R. M., Friedman, D. J., Arulanandam, M. K., King, R. R., Narayan, T. C., Luciano, C., Nizamian, D. P., Johnson, B. A., Young, A. R., Kuritzky, L. Y., Perl, E. E., Limpinsel, M., Kayes, B. M., Ponec, A. J., Bierman, D. M., Briggs, J. A., & Steiner, M. A. (2022). Efficient and Scalable GaInAs Thermophotovoltaic Devices. Joule, 6(11), 2566-2584. https://doi.org/10.1016/j.joule.2022.10.002, https://doi.org/10.1016/j.joule.2022.10.002

@article{bab9e6fe465d4e2db80df5cc93551bb0,

title = "Efficient and Scalable GaInAs Thermophotovoltaic Devices",

abstract = "Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% ± 2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1,850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.",

keywords = "energy, III-V semiconductor, photovoltaic, thermal radiation, thermophotovoltaic",

author = "Tervo, {Eric J.} and France, {Ryan M.} and Friedman, {Daniel J.} and Arulanandam, {Madhan K.} and King, {Richard R.} and Narayan, {Tarun C.} and Cecilia Luciano and Nizamian, {Dustin P.} and Johnson, {Benjamin A.} and Young, {Alexandra R.} and Kuritzky, {Leah Y.} and Perl, {Emmett E.} and Moritz Limpinsel and Kayes, {Brendan M.} and Ponec, {Andrew J.} and Bierman, {David M.} and Briggs, {Justin A.} and Steiner, {Myles A.}",

note = "See NREL/JA-5900-83369 for preprint",

year = "2022",

doi = "10.1016/j.joule.2022.10.002",

language = "American English",

volume = "6",

pages = "2566--2584",

journal = "Joule",

issn = "2542-4351",

publisher = "Cell Press",

number = "11",

}

Tervo, EJ, France, RM , Friedman, DJ, Arulanandam, MK, King, RR, Narayan, TC, Luciano, C, Nizamian, DP, Johnson, BA, Young, AR, Kuritzky, LY, Perl, EE, Limpinsel, M, Kayes, BM, Ponec, AJ, Bierman, DM, Briggs, JA & Steiner, MA 2022, 'Efficient and Scalable GaInAs Thermophotovoltaic Devices', Joule, vol. 6, no. 11, pp. 2566-2584. https://doi.org/10.1016/j.joule.2022.10.002, https://doi.org/10.1016/j.joule.2022.10.002

TY - JOUR

T1 - Efficient and Scalable GaInAs Thermophotovoltaic Devices

AU - Tervo, Eric J.

AU - France, Ryan M.

AU - Friedman, Daniel J.

AU - Arulanandam, Madhan K.

AU - King, Richard R.

AU - Narayan, Tarun C.

AU - Luciano, Cecilia

AU - Nizamian, Dustin P.

AU - Johnson, Benjamin A.

AU - Young, Alexandra R.

AU - Kuritzky, Leah Y.

AU - Perl, Emmett E.

AU - Limpinsel, Moritz

AU - Kayes, Brendan M.

AU - Ponec, Andrew J.

AU - Bierman, David M.

AU - Briggs, Justin A.

AU - Steiner, Myles A.

N1 - See NREL/JA-5900-83369 for preprint

PY - 2022

Y1 - 2022

N2 - Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% ± 2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1,850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

AB - Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% ± 2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1,850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

KW - energy

KW - III-V semiconductor

KW - photovoltaic

KW - thermal radiation

KW - thermophotovoltaic

UR - http://www.scopus.com/inward/record.url?scp=85141770337&partnerID=8YFLogxK

U2 - 10.1016/j.joule.2022.10.002

DO - 10.1016/j.joule.2022.10.002

M3 - Article

AN - SCOPUS:85141770337

SN - 2542-4351

VL - 6

SP - 2566

EP - 2584

JO - Joule

JF - Joule

IS - 11

ER -

Efficient and Scalable GaInAs Thermophotovoltaic Devices

Abstract

Bibliographical note

NREL Publication Number

Keywords

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