Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]

Eric Tervo, Ryan France, Daniel Friedman, Madhan Arulanandam, Richard King, Tarun Narayan, Cecilia Luciano, Dustin Nizamian, Benjamin Johnson, Alexandra Young, Leah Kuritzky, Emmett Perl, Moritz Limpinsel, Brendan Kayes, Andrew Ponec, David Bierman, Justin Briggs, Myles Steiner

Research output: Contribution to journalArticle


Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8+/-2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1850 degrees C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs/0.74-eV GaInAs device illustrate this promise.
Original languageAmerican English
Number of pages27
StatePublished - 2022

Bibliographical note

See NREL/JA-5900-84599 for paper as published in Joule

NREL Publication Number

  • NREL/JA-5900-83369


  • commercial epitaxy
  • GaInAs
  • thermophotovoltaic
  • TPV


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