Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]

Eric Tervo; Ryan France; Daniel Friedman; Madhan Arulanandam; Richard King; Tarun Narayan; Cecilia Luciano; Dustin Nizamian; Benjamin Johnson; Alexandra Young; Leah Kuritzky; Emmett Perl; Moritz Limpinsel; Brendan Kayes; Andrew Ponec; David Bierman; Justin Briggs; Myles Steiner

doi:10.48550/arXiv.2207.00565

Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]

Eric Tervo, Ryan France, Daniel Friedman, Madhan Arulanandam, Richard King, Tarun Narayan, Cecilia Luciano, Dustin Nizamian, Benjamin Johnson, Alexandra Young, Leah Kuritzky, Emmett Perl, Moritz Limpinsel, Brendan Kayes, Andrew Ponec, David Bierman, Justin Briggs, Myles Steiner

Chemistry and Nanoscience

Research output: Contribution to journal › Article

Abstract

Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8+/-2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1850 degrees C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs/0.74-eV GaInAs device illustrate this promise.

Original language	American English
Number of pages	27
Journal	ArXiv.org
DOIs	https://doi.org/10.48550/arXiv.2207.00565
State	Published - 2022

Bibliographical note

See NREL/JA-5900-84599 for paper as published in Joule

NREL Publication Number

NREL/JA-5900-83369

Keywords

commercial epitaxy
GaInAs
thermophotovoltaic
TPV

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10.48550/arXiv.2207.00565

Cite this

Tervo, E., France, R., Friedman, D., Arulanandam, M., King, R., Narayan, T., Luciano, C., Nizamian, D., Johnson, B., Young, A., Kuritzky, L., Perl, E., Limpinsel, M., Kayes, B., Ponec, A., Bierman, D., Briggs, J., & Steiner, M. (2022). Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]. ArXiv.org. https://doi.org/10.48550/arXiv.2207.00565

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title = "Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]",

abstract = "Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8+/-2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1850 degrees C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs/0.74-eV GaInAs device illustrate this promise.",

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author = "Eric Tervo and Ryan France and Daniel Friedman and Madhan Arulanandam and Richard King and Tarun Narayan and Cecilia Luciano and Dustin Nizamian and Benjamin Johnson and Alexandra Young and Leah Kuritzky and Emmett Perl and Moritz Limpinsel and Brendan Kayes and Andrew Ponec and David Bierman and Justin Briggs and Myles Steiner",

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doi = "10.48550/arXiv.2207.00565",

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T2 - arXiv:2207.00565 [physics.app-ph]

AU - Tervo, Eric

AU - France, Ryan

AU - Friedman, Daniel

AU - Arulanandam, Madhan

AU - King, Richard

AU - Narayan, Tarun

AU - Luciano, Cecilia

AU - Nizamian, Dustin

AU - Johnson, Benjamin

AU - Young, Alexandra

AU - Kuritzky, Leah

AU - Perl, Emmett

AU - Limpinsel, Moritz

AU - Kayes, Brendan

AU - Ponec, Andrew

AU - Bierman, David

AU - Briggs, Justin

AU - Steiner, Myles

N1 - See NREL/JA-5900-84599 for paper as published in Joule

PY - 2022

Y1 - 2022

N2 - Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8+/-2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1850 degrees C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs/0.74-eV GaInAs device illustrate this promise.

AB - Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8+/-2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1850 degrees C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs/0.74-eV GaInAs device illustrate this promise.

KW - commercial epitaxy

KW - GaInAs

KW - thermophotovoltaic

KW - TPV

U2 - 10.48550/arXiv.2207.00565

DO - 10.48550/arXiv.2207.00565

M3 - Article

SN - 2331-8422

JO - ArXiv.org

JF - ArXiv.org

ER -

Efficient and Scalable GaInAs Thermophotovoltaic Devices: arXiv:2207.00565 [physics.app-ph]

Abstract

Bibliographical note

NREL Publication Number

Keywords

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