Abstract
We fabricated black silicon solar cells with conversion efficiency of 16.8% on p-type single crystal Si wafers with a conventional diffused emitter and Al back-surface field (BSF). We replaced the anti-reflection coating step with a single 3-minute 'black-silicon' etch of the bare wafer before processing. The nanoporous black-silicon layer, about 300-nm thick is produced in a 3-minute single-step liquid etch based upon catalysis by Au nano-particles formed in a solution containing HF and H2O2. Solar cell reflectance is well below 5% at incident wavelengths from 350 to 1000 nm. We present reflectance versus time data during this simple single-step etching. We also characterize cell performance and find that recombination in the black silicon surface layer must still be reduced.
Original language | American English |
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Pages | 141-145 |
Number of pages | 5 |
DOIs | |
State | Published - 2009 |
Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
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Country/Territory | United States |
City | Philadelphia, PA |
Period | 7/06/09 → 12/06/09 |
NREL Publication Number
- NREL/CP-520-46036
Keywords
- coatings
- etching
- gold
- hafnium
- laboratories
- nanoporous materials
- photovoltaic cells
- reflectivity
- renewable energy resources
- silicon