Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy

D. Van Gestel; M. J. Romero; I. Gordon; L. Carnel; J. D'Haen; G. Beaucarne; M. Al-Jassim; J. Poortmans

doi:10.1063/1.2709643

Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy

D. Van Gestel, M. J. Romero, I. Gordon, L. Carnel, J. D'Haen, G. Beaucarne, M. Al-Jassim, J. Poortmans

Materials Science

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Abstract

Defect etching revealed a very large density (∼ 109 cm-2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects.

Original language	American English
Article number	Article No. 092103
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2709643 https://doi.org/10.1063/1.2709643
State	Published - 2007

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NREL/JA-520-41685

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Van Gestel, D., Romero, M. J., Gordon, I., Carnel, L., D'Haen, J., Beaucarne, G., Al-Jassim, M., & Poortmans, J. (2007). Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy. Applied Physics Letters, 90(9), Article Article No. 092103. https://doi.org/10.1063/1.2709643, https://doi.org/10.1063/1.2709643

@article{662ab71561bb4b9ab33b9f69a53b487b,

title = "Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy",

abstract = "Defect etching revealed a very large density (∼ 109 cm-2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects.",

author = "{Van Gestel}, D. and Romero, {M. J.} and I. Gordon and L. Carnel and J. D'Haen and G. Beaucarne and M. Al-Jassim and J. Poortmans",

year = "2007",

doi = "10.1063/1.2709643",

language = "American English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

Van Gestel, D, Romero, MJ, Gordon, I, Carnel, L, D'Haen, J, Beaucarne, G, Al-Jassim, M & Poortmans, J 2007, 'Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy', Applied Physics Letters, vol. 90, no. 9, Article No. 092103. https://doi.org/10.1063/1.2709643, https://doi.org/10.1063/1.2709643

TY - JOUR

T1 - Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy

AU - Van Gestel, D.

AU - Romero, M. J.

AU - Gordon, I.

AU - Carnel, L.

AU - D'Haen, J.

AU - Beaucarne, G.

AU - Al-Jassim, M.

AU - Poortmans, J.

PY - 2007

Y1 - 2007

N2 - Defect etching revealed a very large density (∼ 109 cm-2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects.

AB - Defect etching revealed a very large density (∼ 109 cm-2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects.

UR - http://www.scopus.com/inward/record.url?scp=33847645311&partnerID=8YFLogxK

U2 - 10.1063/1.2709643

DO - 10.1063/1.2709643

M3 - Article

AN - SCOPUS:33847645311

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - Article No. 092103

ER -

Electrical Activity of Intragrain Defects in Polycrystalline Silicon Layers Obtained by Aluminum-Induced Crystallization and Epitaxy

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