Abstract
We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at0.55 eV whose concentration is significant when the Cu concentration ishigh. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
Original language | American English |
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Number of pages | 8 |
State | Published - 2012 |
Event | 2012 IEEE Photovoltaic Specialists Conference - Austin, Texas Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
Conference | 2012 IEEE Photovoltaic Specialists Conference |
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City | Austin, Texas |
Period | 3/06/12 → 8/06/12 |
NREL Publication Number
- NREL/CP-5200-54125
Keywords
- admittance measurement
- capacitance voltage (CV)
- CdTe
- charge carrier density
- contacts
- defects