Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells With a ZnTe:Cu Back Contact

Jian V. Li, Joel N. Duenow, Darius Kuciauskas, Ana Kanevce, Ramesh G. Dhere, Matthew R. Young, Dean H. Levi

Research output: Contribution to journalArticlepeer-review

25 Scopus Citations

Abstract

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration, while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ∼0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back-contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.

Original languageAmerican English
Article number6509932
Pages (from-to)1095-1099
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume3
Issue number3
DOIs
StatePublished - 2013

NREL Publication Number

  • NREL/JA-5200-60311

Keywords

  • Admittance measurement
  • capacitance-voltage (CV) characteristics
  • CdTe
  • charge carrier density
  • contacts
  • defect

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