Abstract
An ability to lift off or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. We use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of thegrain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. Also, a variable doping density within the grains of non-etched material has been determined. These results allow asemi-quantitative grain-boundary band diagram to be drawn that should aid in determining more-accurate two-dimensional models for polycrystalline CdTe solar cells.
| Original language | American English |
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| Number of pages | 8 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25632