Electrical Characterization of Etched Grain-Boundary Properties from As-Processed px-CdTe Based Solar Cells

Research output: Contribution to conferencePaper

Abstract

An ability to lift off or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. We use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of thegrain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. Also, a variable doping density within the grains of non-etched material has been determined. These results allow asemi-quantitative grain-boundary band diagram to be drawn that should aid in determining more-accurate two-dimensional models for polycrystalline CdTe solar cells.
Original languageAmerican English
Number of pages8
StatePublished - 1998
EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovoltaics Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25632

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