Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells

Jian V. Li; Sachit Grover; Ingrid L. Repins; Brian M. Keyes; Miguel A. Contreras; Kannan Ramanathan; Rommel Noufi; Zhibo Zhao; Feng Liao

doi:10.1109/PVSC.2014.6925013

Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells

Jian V. Li, Sachit Grover, Ingrid L. Repins, Brian M. Keyes, Miguel A. Contreras, Kannan Ramanathan, Rommel Noufi, Zhibo Zhao, Feng Liao

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

The open-circuit voltage V_OC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface R^i,f and at the absorber/back-contact interface R^i,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of V_OC on temperature and illumination with varying wavelength. We show that R^i,f is mainly determined by the potential barrier height φ_b0 at the buffer/absorber interface. We discuss strategies to increase φ_b0 by engineering band offset, band bending, and inversion.

Original language	American English
Pages	686-690
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2014.6925013 https://doi.org/10.1109/PVSC.2014.6925013
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5J00-61362

Keywords

capacitance spectroscopy
contact
interface
open-circuit voltage
recombination

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Li, J. V., Grover, S., Repins, I. L., Keyes, B. M., Contreras, M. A., Ramanathan, K., Noufi, R., Zhao, Z., & Liao, F. (2014). Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells. 686-690. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925013, https://doi.org/10.1109/PVSC.2014.6925013

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title = "Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells",

abstract = "The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.",

keywords = "capacitance spectroscopy, contact, interface, open-circuit voltage, recombination",

author = "Li, {Jian V.} and Sachit Grover and Repins, {Ingrid L.} and Keyes, {Brian M.} and Contreras, {Miguel A.} and Kannan Ramanathan and Rommel Noufi and Zhibo Zhao and Feng Liao",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

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doi = "10.1109/PVSC.2014.6925013",

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Li, JV, Grover, S, Repins, IL , Keyes, BM, Contreras, MA, Ramanathan, K, Noufi, R, Zhao, Z & Liao, F 2014, 'Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 686-690. https://doi.org/10.1109/PVSC.2014.6925013, https://doi.org/10.1109/PVSC.2014.6925013

Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells. / Li, Jian V.; Grover, Sachit; Repins, Ingrid L. et al.
2014. 686-690 Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells

AU - Li, Jian V.

AU - Grover, Sachit

AU - Repins, Ingrid L.

AU - Keyes, Brian M.

AU - Contreras, Miguel A.

AU - Ramanathan, Kannan

AU - Noufi, Rommel

AU - Zhao, Zhibo

AU - Liao, Feng

PY - 2014/10/15

Y1 - 2014/10/15

N2 - The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.

AB - The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.

KW - capacitance spectroscopy

KW - contact

KW - interface

KW - open-circuit voltage

KW - recombination

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DO - 10.1109/PVSC.2014.6925013

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T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

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ER -

Li JV, Grover S, Repins IL , Keyes BM, Contreras MA, Ramanathan K et al.. Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells. 2014. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. doi: 10.1109/PVSC.2014.6925013, 10.1109/PVSC.2014.6925013

Electrical Characterization of Interface Recombination and its Dependence on Band Offset, Potential Barrier Height, and Inversion in Certain Heterojunction Solar Cells

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Keywords

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