Abstract
This CRADA helped Innovalight characterize and quantify their ink-based selective emitter technology. Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology was demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy revealed; abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidalsurfaces was also verified using scanning electron microscopy dopant contrast imaging.
| Original language | American English |
|---|---|
| Number of pages | 8 |
| DOIs | |
| State | Published - 2011 |
NREL Publication Number
- NREL/TP-7A10-50944
Keywords
- CRADAS
- electrical characterization of printed nanocrystalline silicon films
- Innovalight