Electrical Charge Trapping at Defects on the Si(111)7x7 Surface

C. S. Jiang, H. R. Moutinho, M. J. Romero, M. M. Al-Jassim, L. L. Kazmerski

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We report on a direct measurement of electron trapping at defects on the Si (111) 7×7 surface, by combining Kelvin probe force microscopy (KPFM) and scanning tunneling microscopy (STM) measurements. One-dimensional defects of atomic steps and two-dimensional defects of disordered domains were found on the surface. STM reveals that the disordered domain is located in the intersection area between three 7×7 domains. KPFM measurement shows that electrons are trapped at both the atomic steps and the disordered domains, and this electron trapping gives rise to a larger local work function on the defect region than on the defect-free 7×7 regions.

Original languageAmerican English
Article number061909
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - Feb 2006

NREL Publication Number

  • NREL/JA-520-38842


  • defects
  • disordered domains
  • electron trapping
  • Kelvin probe force microscopy (KPFM)
  • scanning tunneling microscopy (STM)


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