Electrical Conduction Channel Along the Grain Boundaries of Cu(In,Ga)Se2 Thin Films

C. S. Jiang, I. L. Repins, L. M. Mansfield, M. A. Contreras, H. R. Moutinho, K. Ramanathan, R. Noufi, M. M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

23 Scopus Citations


We report on a direct nm-resolution resistance mapping on the Cu(In,Ga)Se2 photovoltaic thin films, using scanning spreading resistance microcopy. We found a conductance channel along the grain boundaries (GBs) of the polycrystalline materials, which is consistent with the argument that carrier polarity of the GB and the space charge region around it is inverted. To minimize the probe/film contact resistance, so that the local spreading resistance beneath the probe is measured, the probe must be adequately indented to the film and a bias voltage larger than the onset value of the probe/film barrier should be applied.

Original languageAmerican English
Article numberArticle No. 253905
Number of pages5
JournalApplied Physics Letters
Issue number25
StatePublished - 24 Jun 2013

NREL Publication Number

  • NREL/JA-5200-58991


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