Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

Teresa M. Barnes; Xiaonan Li; Clay DeHart; Helio Moutinho; Sally Asher; Yanfa Yan; Timothy A. Gessert

doi:10.1557/proc-666-f1.8

Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

Teresa M. Barnes, Xiaonan Li, Clay DeHart, Helio Moutinho, Sally Asher, Yanfa Yan, Timothy A. Gessert

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm²/V-s and a carrier concentration of 3.8×10¹⁹/cm³.

Original language	American English
Pages	F181-F186
DOIs	https://doi.org/10.1557/proc-666-f1.8
State	Published - 2001
Externally published	Yes
Event	Transport and Microstructural Phenomena in Oxide Electronics: Materials Research Society Symposium - San Francisco, California Duration: 16 Apr 2001 → 20 Apr 2001

Conference

Conference	Transport and Microstructural Phenomena in Oxide Electronics: Materials Research Society Symposium
City	San Francisco, California
Period	16/04/01 → 20/04/01

NREL Publication Number

NREL/CP-520-30138

Access to Document

10.1557/proc-666-f1.8

Cite this

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title = "Electrical, Optical, and Structural Properties of Fluorine-Doped CdO",

abstract = "We have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.",

author = "Barnes, {Teresa M.} and Xiaonan Li and Clay DeHart and Helio Moutinho and Sally Asher and Yanfa Yan and Gessert, {Timothy A.}",

year = "2001",

doi = "10.1557/proc-666-f1.8",

language = "American English",

pages = "F181--F186",

note = "Transport and Microstructural Phenomena in Oxide Electronics: Materials Research Society Symposium ; Conference date: 16-04-2001 Through 20-04-2001",

}

Barnes, TM, Li, X, DeHart, C, Moutinho, H, Asher, S, Yan, Y & Gessert, TA 2001, 'Electrical, Optical, and Structural Properties of Fluorine-Doped CdO', Paper presented at Transport and Microstructural Phenomena in Oxide Electronics: Materials Research Society Symposium, San Francisco, California, 16/04/01 - 20/04/01 pp. F181-F186. https://doi.org/10.1557/proc-666-f1.8

TY - CONF

T1 - Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

AU - Barnes, Teresa M.

AU - Li, Xiaonan

AU - DeHart, Clay

AU - Moutinho, Helio

AU - Asher, Sally

AU - Yan, Yanfa

AU - Gessert, Timothy A.

PY - 2001

Y1 - 2001

N2 - We have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.

AB - We have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.

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DO - 10.1557/proc-666-f1.8

M3 - Paper

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T2 - Transport and Microstructural Phenomena in Oxide Electronics: Materials Research Society Symposium

Y2 - 16 April 2001 through 20 April 2001

ER -

Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

Abstract

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