Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells

T. Sasaki; K. Arafune; H. S. Lee; N. J. Ekins-Daukes; S. Tanaka; W. Metzger; M. J. Romero; K. Jones; M. Al-Jassim; Y. Ohshita; M. Yamaguchi

doi:10.1109/WCPEC.2006.279576

Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells

T. Sasaki, K. Arafune, H. S. Lee, N. J. Ekins-Daukes, S. Tanaka, W. Metzger, M. J. Romero, K. Jones, M. Al-Jassim, Y. Ohshita, M. Yamaguchi

Materials Science

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Higher conversion efficiency has been predicted theoretically for InGaP/In_0.16Ga_0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In_0.16Ga_0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In_0.16Ga_0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In_0.16Ga_0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.

Original language	American English
Pages	795-798
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279576
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-41300

Access to Document

10.1109/WCPEC.2006.279576

Cite this

Sasaki, T., Arafune, K., Lee, H. S., Ekins-Daukes, N. J., Tanaka, S., Metzger, W., Romero, M. J., Jones, K., Al-Jassim, M., Ohshita, Y., & Yamaguchi, M. (2006). Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells. 795-798. Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States. https://doi.org/10.1109/WCPEC.2006.279576

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title = "Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells",

abstract = "Higher conversion efficiency has been predicted theoretically for InGaP/In0.16Ga0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In0.16Ga0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In0.16Ga0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In0.16Ga0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.",

author = "T. Sasaki and K. Arafune and Lee, {H. S.} and Ekins-Daukes, {N. J.} and S. Tanaka and W. Metzger and Romero, {M. J.} and K. Jones and M. Al-Jassim and Y. Ohshita and M. Yamaguchi",

year = "2006",

doi = "10.1109/WCPEC.2006.279576",

language = "American English",

pages = "795--798",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Sasaki, T, Arafune, K, Lee, HS, Ekins-Daukes, NJ, Tanaka, S, Metzger, W, Romero, MJ, Jones, K, Al-Jassim, M, Ohshita, Y & Yamaguchi, M 2006, 'Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells', Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06 - 12/05/06 pp. 795-798. https://doi.org/10.1109/WCPEC.2006.279576

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AU - Sasaki, T.

AU - Arafune, K.

AU - Lee, H. S.

AU - Ekins-Daukes, N. J.

AU - Tanaka, S.

AU - Metzger, W.

AU - Romero, M. J.

AU - Jones, K.

AU - Al-Jassim, M.

AU - Ohshita, Y.

AU - Yamaguchi, M.

PY - 2006

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N2 - Higher conversion efficiency has been predicted theoretically for InGaP/In0.16Ga0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In0.16Ga0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In0.16Ga0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In0.16Ga0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.

AB - Higher conversion efficiency has been predicted theoretically for InGaP/In0.16Ga0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In0.16Ga0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In0.16Ga0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In0.16Ga0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.

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ER -

Electrical Properties and Structural Defects in Lattice Mismatched InGaAs Solar Cells

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