Electrical Properties of Boron-Doped ..mu..c-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets

Electrical Properties of Boron-Doped ..mu..c-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets

Research output: Contribution to conference › Paper

Original language	American English
Pages	567-572
Number of pages	6
State	Published - 1993
Event	Materials Research Society Symposium - Boston, Massachusetts Duration: 30 Nov 1992 → 4 Dec 1992

Conference

Conference	Materials Research Society Symposium
City	Boston, Massachusetts
Period	30/11/92 → 4/12/92

Bibliographical note

Work performed by North Carolina State University, Departments of Physics and Materials Science and Engineering, Raleigh, North Carolina

NREL Publication Number

ACNR/CP-14594

Cite this

@conference{effe2ac180e044249baa4350f2866eff,

title = "Electrical Properties of Boron-Doped ..mu..c-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets",

author = "NREL",

note = "Work performed by North Carolina State University, Departments of Physics and Materials Science and Engineering, Raleigh, North Carolina; Materials Research Society Symposium ; Conference date: 30-11-1992 Through 04-12-1992",

year = "1993",

language = "American English",

pages = "567--572",

}

TY - CONF

T1 - Electrical Properties of Boron-Doped ..mu..c-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets

AU - NREL, null

N1 - Work performed by North Carolina State University, Departments of Physics and Materials Science and Engineering, Raleigh, North Carolina

PY - 1993

Y1 - 1993

M3 - Paper

SP - 567

EP - 572

T2 - Materials Research Society Symposium

Y2 - 30 November 1992 through 4 December 1992

ER -