Electrical Properties of CdS/Cu(In,Ga)Se2 Interface

Lorelle Mansfield, Jian Li, Brian Egaas, Kannan Ramanathan

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se2 (CIGS) interface using the capacitance-voltage technique applied to a metal-insulator-semiconductor structure. The density of interface states is on the order of 1010 to 1013cm-2 eV-1. The effective fixed charge at the interface is (7.8 ± 0.3) × 1011cm2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiNx/p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley-Read-Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103cm·s-1, which agrees reasonably with temperature-intensity dependent recombination analysis.

Original languageAmerican English
Article number085701
Number of pages5
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number8
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2018 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-72040


  • electrical properties
  • interface density
  • semiconductor structure


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