Electrical, Structural and Bonding Changes Induced in Silicon by H, Ar, and Kr Ion-Beam Etching

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)334-336
    Number of pages3
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number2, Part I
    StatePublished - 1983

    Bibliographical note

    Work performed by Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania

    NREL Publication Number

    • ACNR/JA-4088

    Cite this