Electrical, Structural and Bonding Changes Induced in Silicon by H, Ar, and Kr Ion-Beam Etching

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	334-336
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2, Part I
DOIs	https://doi.org/10.1116/1.572127
State	Published - 1983

Work performed by Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

@article{2fd2b0d7424a4775875359eb1799263a,

title = "Electrical, Structural and Bonding Changes Induced in Silicon by H, Ar, and Kr Ion-Beam Etching",

author = "NREL",

note = "Work performed by Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania",

year = "1983",

doi = "10.1116/1.572127",

language = "American English",

volume = "1",

pages = "334--336",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2, Part I",

}

TY - JOUR

T1 - Electrical, Structural and Bonding Changes Induced in Silicon by H, Ar, and Kr Ion-Beam Etching

AU - NREL, null

N1 - Work performed by Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania

PY - 1983

Y1 - 1983

U2 - 10.1116/1.572127

DO - 10.1116/1.572127

M3 - Article

SN - 0734-2101

VL - 1

SP - 334

EP - 336

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2, Part I

ER -