Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Adam Danielson, Carey Reich, Ramesh Pandey, Amit Munshi, Arthur Onno, Will Weigand, Darius Kuciauskas, Siming Li, Alexandra Bothwell, Jinglong Guo, Magesh Murugeson, John McCloy, Robert Klie, Zachary Holman, Walajabad Sampath

Research output: Contribution to journalArticlepeer-review

4 Scopus Citations

Abstract

Most contemporary device models predict that an acceptor concentration of at least 1016 cm−3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 1013 to 1015 cm−3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

Original languageAmerican English
Article numberArticle No. 112110
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume251
DOIs
StatePublished - Mar 2023

Bibliographical note

Publisher Copyright:
© 2022

NREL Publication Number

  • NREL/JA-5900-84900

Keywords

  • cadmium telluride
  • efficiency
  • II-VI semiconductors
  • solar absorbers

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