Electrochemical Investigation of the Gallium Nitride-Aqueous Electrolyte Interface

Shyam S. Kocha; Mark W. Peterson; Douglas J. Arent; John A. Turner

doi:10.1149/1.2048511

Electrochemical Investigation of the Gallium Nitride-Aqueous Electrolyte Interface

Shyam S. Kocha, Mark W. Peterson, Douglas J. Arent, John A. Turner

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Abstract

GaN (Eg = —3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscdpy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.

Original language	American English
Pages (from-to)	L238-L240
Journal	Journal of the Electrochemical Society
Volume	142
Issue number	12
DOIs	https://doi.org/10.1149/1.2048511 https://doi.org/10.1149/1.2048511
State	Published - 1995

NREL Publication Number

NREL/JA-452-20234

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title = "Electrochemical Investigation of the Gallium Nitride-Aqueous Electrolyte Interface",

abstract = "GaN (Eg = —3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscdpy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.",

author = "Kocha, {Shyam S.} and Peterson, {Mark W.} and Arent, {Douglas J.} and Turner, {John A.}",

year = "1995",

doi = "10.1149/1.2048511",

language = "American English",

volume = "142",

pages = "L238--L240",

journal = "Journal of the Electrochemical Society",

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AU - Kocha, Shyam S.

AU - Peterson, Mark W.

AU - Arent, Douglas J.

AU - Turner, John A.

PY - 1995

Y1 - 1995

N2 - GaN (Eg = —3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscdpy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.

AB - GaN (Eg = —3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscdpy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.

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DO - 10.1149/1.2048511

M3 - Article

AN - SCOPUS:0029491214

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JO - Journal of the Electrochemical Society

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ER -

Electrochemical Investigation of the Gallium Nitride-Aqueous Electrolyte Interface

Abstract

NREL Publication Number

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