Electrochemical Photocapacitance Spectroscopy Method for Characterization of Deep Levels and Interface States in Semiconductor Materials

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	275-283
Number of pages	9
Journal	Journal of the Electrochemical Society
Volume	131
Issue number	2
DOIs	https://doi.org/10.1149/1.2115562
State	Published - 1984

Work performed by Rockwell International Science Center, Thousand Oaks, California

NREL Publication Number

@article{4cc18566258d4e52be05412c141e7008,

title = "Electrochemical Photocapacitance Spectroscopy Method for Characterization of Deep Levels and Interface States in Semiconductor Materials",

author = "NREL",

note = "Work performed by Rockwell International Science Center, Thousand Oaks, California",

year = "1984",

doi = "10.1149/1.2115562",

language = "American English",

volume = "131",

pages = "275--283",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Electrochemical Photocapacitance Spectroscopy Method for Characterization of Deep Levels and Interface States in Semiconductor Materials

AU - NREL, null

N1 - Work performed by Rockwell International Science Center, Thousand Oaks, California

PY - 1984

Y1 - 1984

U2 - 10.1149/1.2115562

DO - 10.1149/1.2115562

M3 - Article

SN - 0013-4651

VL - 131

SP - 275

EP - 283

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -