Electrochemistry of Homoepitaxial CVD Diamond: Energetics and Electrode Kinetics in Aqueous Electrolytes

J. Van De Lagemaat; D. Vanmaekelbergh; J. J. Kelly

doi:10.1016/S0022-0728(99)00344-7

Electrochemistry of Homoepitaxial CVD Diamond: Energetics and Electrode Kinetics in Aqueous Electrolytes

J. Van De Lagemaat, D. Vanmaekelbergh, J. J. Kelly

Chemistry and Nanoscience

Utrecht University

Research output: Contribution to journal › Article › peer-review

55 Scopus Citations

Abstract

The electrochemical properties of highly doped p-type single crystalline diamond electrodes (100 and 110 oriented) in aqueous electrolytes were investigated. The interfacial capacitance obeys the Mott-Schottky relationship in a considerable potential range and can be assigned to a depletion layer in the diamond. The energetic position of the valence band edge is about 4 and 2 V versus SHE for (100) and (110) oriented diamond respectively. Oxygen and hydrogen evolution occur at large overpotentials (1 V) in agreement with previous results reported for polycrystalline diamond. Interestingly, with reversible redox systems, metal-type redox kinetics around the equilibrium potential are observed. The mechanism of electron exchange between the valence band of diamond and simple redox systems was investigated in detail using electrochemical impedance spectroscopy. A quantitative model is proposed, that assumes that electron exchange is mediated by bandgap states.

Original language	American English
Pages (from-to)	139-151
Number of pages	13
Journal	Journal of Electroanalytical Chemistry
Volume	475
Issue number	2
DOIs	https://doi.org/10.1016/S0022-0728(99)00344-7 https://doi.org/10.1016/S0022-0728(99)00344-7
State	Published - 1999

NREL Publication Number

NREL/JA-590-29058

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title = "Electrochemistry of Homoepitaxial CVD Diamond: Energetics and Electrode Kinetics in Aqueous Electrolytes",

abstract = "The electrochemical properties of highly doped p-type single crystalline diamond electrodes (100 and 110 oriented) in aqueous electrolytes were investigated. The interfacial capacitance obeys the Mott-Schottky relationship in a considerable potential range and can be assigned to a depletion layer in the diamond. The energetic position of the valence band edge is about 4 and 2 V versus SHE for (100) and (110) oriented diamond respectively. Oxygen and hydrogen evolution occur at large overpotentials (1 V) in agreement with previous results reported for polycrystalline diamond. Interestingly, with reversible redox systems, metal-type redox kinetics around the equilibrium potential are observed. The mechanism of electron exchange between the valence band of diamond and simple redox systems was investigated in detail using electrochemical impedance spectroscopy. A quantitative model is proposed, that assumes that electron exchange is mediated by bandgap states.",

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AU - Vanmaekelbergh, D.

AU - Kelly, J. J.

PY - 1999

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N2 - The electrochemical properties of highly doped p-type single crystalline diamond electrodes (100 and 110 oriented) in aqueous electrolytes were investigated. The interfacial capacitance obeys the Mott-Schottky relationship in a considerable potential range and can be assigned to a depletion layer in the diamond. The energetic position of the valence band edge is about 4 and 2 V versus SHE for (100) and (110) oriented diamond respectively. Oxygen and hydrogen evolution occur at large overpotentials (1 V) in agreement with previous results reported for polycrystalline diamond. Interestingly, with reversible redox systems, metal-type redox kinetics around the equilibrium potential are observed. The mechanism of electron exchange between the valence band of diamond and simple redox systems was investigated in detail using electrochemical impedance spectroscopy. A quantitative model is proposed, that assumes that electron exchange is mediated by bandgap states.

AB - The electrochemical properties of highly doped p-type single crystalline diamond electrodes (100 and 110 oriented) in aqueous electrolytes were investigated. The interfacial capacitance obeys the Mott-Schottky relationship in a considerable potential range and can be assigned to a depletion layer in the diamond. The energetic position of the valence band edge is about 4 and 2 V versus SHE for (100) and (110) oriented diamond respectively. Oxygen and hydrogen evolution occur at large overpotentials (1 V) in agreement with previous results reported for polycrystalline diamond. Interestingly, with reversible redox systems, metal-type redox kinetics around the equilibrium potential are observed. The mechanism of electron exchange between the valence band of diamond and simple redox systems was investigated in detail using electrochemical impedance spectroscopy. A quantitative model is proposed, that assumes that electron exchange is mediated by bandgap states.

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Electrochemistry of Homoepitaxial CVD Diamond: Energetics and Electrode Kinetics in Aqueous Electrolytes

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