Abstract
This report describes our scientific understanding of the CIGS materials system, solar cells, and processes. Through DOE support, the investigators developed much of the technology and device fabrication infrastructure applied to electrodeposited (ED) materials. The electrodeposition process is simple and fast, and can synthesize multinary precursors for subsequent processing into CuInxGa1-xSe2(CIGS) thin-film absorbers for solar cells. The device fabricated by using electrodeposited CIGS precursor layers resulted in total-area conversion efficiencies up to 15.4%. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se (up to 50%) are added to the precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to about Cu0.95In0.75Ga0.25Se2. The ED device parameters are compared with those of an 18.8% PVD device.
Original language | American English |
---|---|
Number of pages | 55 |
DOIs | |
State | Published - 2002 |
NREL Publication Number
- NREL/TP-590-32775
Keywords
- auger electron spectroscopy (AES)
- buffer-based bath
- capacitance voltage (CV)
- conversion efficiency
- CuInGaSe2 (CIGS)
- current-voltage
- electrodeposition process
- electron-probe microanalysis
- PV
- spectral response
- x-ray diffraction (XRD)