Electroluminescence Mapping of CuGaSe2 Solar Cells by Atomic Force Microscopy

Manuel J. Romero, C. S. Jiang, J. Abushama, H. R. Moutinho, M. M. Al-Jassim, R. Noufi

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations

Abstract

The authors report on the observation of electroluminescence (EL) in CuGa Se2 solar cells using tapping-mode atomic force microscopy based on tuning-fork sensors. Individually injected current pulses are seen during intermittent contact driven by an external bias applied to the conducting tip. It follows that EL can be stimulated when the solar cell is forward biased during the contact cycle. Local L-V characteristics show evidence for EL, with a threshold voltage of 3.0-3.7 V. Mapping of the photon emission suggests that grain boundaries effectively isolate grain interiors, which behave as individual light-emitting diodes.

Original languageAmerican English
Article number143120
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
StatePublished - 2006

NREL Publication Number

  • NREL/JA-520-40361

Fingerprint

Dive into the research topics of 'Electroluminescence Mapping of CuGaSe2 Solar Cells by Atomic Force Microscopy'. Together they form a unique fingerprint.

Cite this