Electron Beam Effects in the Analysis of Compound Semiconductors and Devices

L. L. Kazmerski; N. A. Burnham; A. B. Swartzfander; A. J. Nelson; S. E. Asher

doi:10.1116/1.574313

Electron Beam Effects in the Analysis of Compound Semiconductors and Devices

L. L. Kazmerski, N. A. Burnham, A. B. Swartzfander, A. J. Nelson, S. E. Asher

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

The effects of electron beams on the analysis of CulnSe₂ surfaces are examined in this paper. Potential changes in the surface chemistry-including oxidation and desorption-under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam-induced phenomena.

Original language	American English
Pages (from-to)	2814-2818
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	5
Issue number	5
DOIs	https://doi.org/10.1116/1.574313 https://doi.org/10.1116/1.574313
State	Published - 1987

NREL Publication Number

ACNR/JA-213-9824

Access to Document

Cite this

@article{0bae4ef4f37042c18c015ef6a030933e,

title = "Electron Beam Effects in the Analysis of Compound Semiconductors and Devices",

abstract = "The effects of electron beams on the analysis of CulnSe2 surfaces are examined in this paper. Potential changes in the surface chemistry-including oxidation and desorption-under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam-induced phenomena.",

author = "Kazmerski, {L. L.} and Burnham, {N. A.} and Swartzfander, {A. B.} and Nelson, {A. J.} and Asher, {S. E.}",

year = "1987",

doi = "10.1116/1.574313",

language = "American English",

volume = "5",

pages = "2814--2818",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Electron Beam Effects in the Analysis of Compound Semiconductors and Devices

AU - Kazmerski, L. L.

AU - Burnham, N. A.

AU - Swartzfander, A. B.

AU - Nelson, A. J.

AU - Asher, S. E.

PY - 1987

Y1 - 1987

N2 - The effects of electron beams on the analysis of CulnSe2 surfaces are examined in this paper. Potential changes in the surface chemistry-including oxidation and desorption-under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam-induced phenomena.

AB - The effects of electron beams on the analysis of CulnSe2 surfaces are examined in this paper. Potential changes in the surface chemistry-including oxidation and desorption-under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam-induced phenomena.

UR - http://www.scopus.com/inward/record.url?scp=0040808689&partnerID=8YFLogxK

U2 - 10.1116/1.574313

DO - 10.1116/1.574313

M3 - Article

AN - SCOPUS:0040808689

SN - 0734-2101

VL - 5

SP - 2814

EP - 2818

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Electron Beam Effects in the Analysis of Compound Semiconductors and Devices

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this