Electron-Beam-Induced Information Storage in Hydrogenated Amorphous Silicon Devices

Research output: Contribution to journal › Article

NREL Publication Number

@article{0bca7fea2d0446efa0af66588960cde1,

title = "Electron-Beam-Induced Information Storage in Hydrogenated Amorphous Silicon Devices",

author = "NREL",

year = "1984",

doi = "10.1063/1.94881",

language = "American English",

volume = "44",

pages = "695--697",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}