Electron Channeling and EBIC Studies of Polycrystalline Silicon Sheets

Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near [011]; grains with this structure tend to have better electronic quality than random grains. We have alsostudied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm2/min, is essentially single-crystal.