Electron Channeling and EBIC Studies of Polycrystalline Silicon Sheets

    Research output: NRELTechnical Report


    Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near [011]; grains with this structure tend to have better electronic quality than random grains. We have alsostudied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm2/min, is essentially single-crystal.
    Original languageAmerican English
    Number of pages7
    StatePublished - 1984

    NREL Publication Number

    • NREL/TP-211-2319


    • edge-supported pulling (ESP)
    • electron channeling
    • electron-beam induced current (EBIC)
    • low-angle silicon sheet (LASS)
    • silicon sheets
    • studies


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