Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

Qing Gu, E. A. Schiff, R. S. Crandall, E. Iwaniczko, B. Nelson

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


We have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.

Original languageAmerican English
Number of pages6
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 18 Apr 199521 Apr 1995


ConferenceProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA

Bibliographical note

Work performed by Syracuse University, Syracuse, New York and the National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

  • NREL/CP-20849


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