Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

Qing Gu; E. A. Schiff; R. S. Crandall; E. Iwaniczko; B. Nelson

doi:10.1557/proc-377-437

Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

Qing Gu, E. A. Schiff, R. S. Crandall, E. Iwaniczko, B. Nelson

Syracuse University

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.

Original language	American English
Pages	437-442
Number of pages	6
DOIs	https://doi.org/10.1557/proc-377-437
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 18 Apr 1995 → 21 Apr 1995

Conference

Conference	Proceedings of the 1995 MRS Spring Meeting
City	San Francisco, CA, USA
Period	18/04/95 → 21/04/95

Bibliographical note

Work performed by Syracuse University, Syracuse, New York and the National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

NREL/CP-20849

Access to Document

10.1557/proc-377-437

Cite this

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title = "Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition",

abstract = "We have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.",

author = "Qing Gu and Schiff, {E. A.} and Crandall, {R. S.} and E. Iwaniczko and B. Nelson",

note = "Work performed by Syracuse University, Syracuse, New York and the National Renewable Energy Laboratory, Golden, Colorado; Proceedings of the 1995 MRS Spring Meeting ; Conference date: 18-04-1995 Through 21-04-1995",

year = "1995",

doi = "10.1557/proc-377-437",

language = "American English",

pages = "437--442",

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T1 - Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

AU - Gu, Qing

AU - Schiff, E. A.

AU - Crandall, R. S.

AU - Iwaniczko, E.

AU - Nelson, B.

N1 - Work performed by Syracuse University, Syracuse, New York and the National Renewable Energy Laboratory, Golden, Colorado

PY - 1995

Y1 - 1995

N2 - We have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.

AB - We have measured the electron drift mobility in a-Si:H prepared by hot wire (HW) deposition using photocarrier time-of-flight. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. In a sample with about 2% H-concentration in the intrinsic layer, we find that the electron drift mobility is quite different from that of a-Si:H alloys prepared by normal glow-discharge CVD, even allowing for the reduced bandgap of the hot wire material. This result challenges the principle that the bandgap of optimized amorphous silicon based material is sufficient to predict the electron drift mobility.

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U2 - 10.1557/proc-377-437

DO - 10.1557/proc-377-437

M3 - Paper

AN - SCOPUS:0029547572

SP - 437

EP - 442

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 18 April 1995 through 21 April 1995

ER -

Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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