Electron Drift Mobility in Doped Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Xerox Corporation, Palo Alto Research Corporation, Palo Alto, California

NREL Publication Number

@article{8222a7ad0af04f78ac5701fac986368a,

title = "Electron Drift Mobility in Doped Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Corporation, Palo Alto Research Corporation, Palo Alto, California",

year = "1988",

doi = "10.1103/PhysRevB.38.5603",

language = "American English",

volume = "38",

pages = "5603--5609",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Electron Drift Mobility in Doped Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Corporation, Palo Alto Research Corporation, Palo Alto, California

PY - 1988

Y1 - 1988

U2 - 10.1103/PhysRevB.38.5603

DO - 10.1103/PhysRevB.38.5603

M3 - Article

SN - 0163-1829

VL - 38

SP - 5603

EP - 5609

JO - Physical Review B

JF - Physical Review B

IS - 8

ER -