Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

S. A. Dinca, E. A. Schiff, W. N. Shafarman, B. Egaas, R. Noufi, D. L. Young

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26 Scopus Citations


We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Original languageAmerican English
Article number103901
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 5 Mar 2012

NREL Publication Number

  • NREL/JA-5200-54982


  • electron drift
  • solar cells
  • solar energy


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