Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

S. A. Dinca; E. A. Schiff; W. N. Shafarman; B. Egaas; R. Noufi; D. L. Young

doi:10.1063/1.3692165

Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

S. A. Dinca, E. A. Schiff, W. N. Shafarman, B. Egaas, R. Noufi, D. L. Young

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

26 Scopus Citations

Abstract

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn _1-xGa _xSe ₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm ²/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm ²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Original language	American English
Article number	103901
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3692165 https://doi.org/10.1063/1.3692165
State	Published - 5 Mar 2012

NREL Publication Number

NREL/JA-5200-54982

Keywords

electron drift
solar cells
solar energy

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title = "Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells",

abstract = "We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.",

keywords = "electron drift, solar cells, solar energy",

author = "Dinca, {S. A.} and Schiff, {E. A.} and Shafarman, {W. N.} and B. Egaas and R. Noufi and Young, {D. L.}",

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doi = "10.1063/1.3692165",

language = "American English",

volume = "100",

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T1 - Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

AU - Dinca, S. A.

AU - Schiff, E. A.

AU - Shafarman, W. N.

AU - Egaas, B.

AU - Noufi, R.

AU - Young, D. L.

PY - 2012/3/5

Y1 - 2012/3/5

N2 - We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

AB - We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn 1-xGa xSe 2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm 2/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm 2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

KW - electron drift

KW - solar cells

KW - solar energy

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DO - 10.1063/1.3692165

M3 - Article

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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ER -

Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

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