Electron Hall Mobility in GaAsBi

R. N. Kini; L. Bhusal; A. J. Ptak; R. France; A. Mascarenhas

doi:10.1063/1.3204670

Electron Hall Mobility in GaAsBi

R. N. Kini, L. Bhusal, A. J. Ptak, R. France, A. Mascarenhas

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

103 Scopus Citations

Abstract

We present measurements of the electron Hall mobility in n -type GaAs _1-x Bi_x epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration (≥1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Original language	American English
Article number	043705
Number of pages	3
Journal	Journal of Applied Physics
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.3204670 https://doi.org/10.1063/1.3204670
State	Published - 2009

NREL Publication Number

NREL/JA-590-46212

Keywords

basic sciences
materials science

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abstract = "We present measurements of the electron Hall mobility in n -type GaAs 1-x Bix epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration (≥1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.",

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Electron Hall Mobility in GaAsBi

Abstract

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Keywords

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