Electron Hall Mobility in GaAsBi

R. N. Kini, L. Bhusal, A. J. Ptak, R. France, A. Mascarenhas

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We present measurements of the electron Hall mobility in n -type GaAs 1-x Bix epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration (≥1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Original languageAmerican English
Article number043705
Number of pages3
JournalJournal of Applied Physics
Issue number4
StatePublished - 2009

NREL Publication Number

  • NREL/JA-590-46212


  • basic sciences
  • materials science


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