Electron Hall Mobility in GaAsBi

Ryan France; Aaron Ptak; Leknath Bhusel; Rajeev Kini

doi:10.1063/1.3204670

Electron Hall Mobility in GaAsBi

Ryan France
, Aaron Ptak
, Leknath Bhusel
, Rajeev Kini

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Journal of Applied Physics
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.3204670
State	Published - 2009

NLR Publication Number

NREL/JA-590-46212

Keywords

basic sciences
materials science

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10.1063/1.3204670

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@article{65e0568c73424b91ab2633a7acbd9f92,

title = "Electron Hall Mobility in GaAsBi",

keywords = "basic sciences, materials science",

author = "Ryan France and Aaron Ptak and Leknath Bhusel and Rajeev Kini",

year = "2009",

doi = "10.1063/1.3204670",

language = "American English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Electron Hall Mobility in GaAsBi

AU - France, Ryan

AU - Ptak, Aaron

AU - Bhusel, Leknath

AU - Kini, Rajeev

PY - 2009

Y1 - 2009

KW - basic sciences

KW - materials science

UR - https://www.scopus.com/pages/publications/69749126706

U2 - 10.1063/1.3204670

DO - 10.1063/1.3204670

M3 - Article

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Electron Hall Mobility in GaAsBi

NLR Publication Number

Keywords

Access to Document

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