Abstract
The objective of this work is to perform transmission electron microscopy (TEM) studies of GaP(N,As) alloys grown by metal-organic chemical vapor deposition (MOCVD) on Si substrates. These alloys are of interest for the fabrication of high-efficiency tandem solar cells based on Si. The results indicated that the nucleation and growth conditions used are critical for obtaining planar epitaxiallayers with a low defect density. In particular, antiphase domains are eliminated using a low growth temperature. TEM studies of these alloy layers, which contain only a few percent N, revealed no phase separation. However, electron diffraction studies revealed the first evidence of CuPt-type atomic ordering in these P-rich, dilute nitride alloy layers.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-37035
Keywords
- high-efficiency
- low defect density
- metal-organic chemical vapor deposition (MOCVD)
- nitride alloy layers
- planar epitaxial layers
- PV
- tandem solar cells
- transmission electron microscopy (TEM)