Electron Microscopy Studies of GaP(N,As) Grown on Si

Research output: Contribution to conferencePaper


The objective of this work is to perform transmission electron microscopy (TEM) studies of GaP(N,As) alloys grown by metal-organic chemical vapor deposition (MOCVD) on Si substrates. These alloys are of interest for the fabrication of high-efficiency tandem solar cells based on Si. The results indicated that the nucleation and growth conditions used are critical for obtaining planar epitaxiallayers with a low defect density. In particular, antiphase domains are eliminated using a low growth temperature. TEM studies of these alloy layers, which contain only a few percent N, revealed no phase separation. However, electron diffraction studies revealed the first evidence of CuPt-type atomic ordering in these P-rich, dilute nitride alloy layers.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 25 Oct 200428 Oct 2004


Conference2004 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado

Bibliographical note

Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

NREL Publication Number

  • NREL/CP-520-37035


  • high-efficiency
  • low defect density
  • metal-organic chemical vapor deposition (MOCVD)
  • nitride alloy layers
  • planar epitaxial layers
  • PV
  • tandem solar cells
  • transmission electron microscopy (TEM)


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