Abstract
We study the structural, chemical, and electronic properties of individual grain boundaries in Cu2ZnSnSe4 (CZTSe) using combined electron microscopy techniques including scanning electron microscopy-based cathodoluminescence (CL)-spectrum imaging and scanning transmission electron microscopy-based Z-contrast imaging and energy-dispersive spectroscopy profiling. Two representative grain boundaries have been studied. We find that the grain boundary that exhibits a redshift in the CL spectrum image is found to link to a ZnSe second phase. The grain boundary showing no redshift in the CL spectrum image is not linked to any secondary phase. The stability of CZTSe cross-section samples with storage time is also discussed.
Original language | American English |
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Pages | 1681-1684 |
Number of pages | 4 |
DOIs | |
State | Published - 2013 |
Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013 |
Conference
Conference | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
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Country/Territory | United States |
City | Tampa, FL |
Period | 16/06/13 → 21/06/13 |
NREL Publication Number
- NREL/CP-5200-57856
Keywords
- Cathodoluminescence
- Electron microscopy
- Grain boundary
- Polycrystalline thin film