Electron Mobility in p-GaAs by Time-of-Flight

R. K. Ahrenkiel; D. J. Dunlavy; D. Greenberg; J. Schlupmann; H. C. Hamaker; H. F. MacMillan

doi:10.1063/1.98864

Electron Mobility in p-GaAs by Time-of-Flight

R. K. Ahrenkiel, D. J. Dunlavy, D. Greenberg, J. Schlupmann, H. C. Hamaker, H. F. MacMillan

Materials Science

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Abstract

The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×10¹⁷ and 2×10¹⁸ cm^-3 were investigated. The measured mobilities were about 2900 and 1300 cm²/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.

Original language	American English
Pages (from-to)	776-778
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	10
DOIs	https://doi.org/10.1063/1.98864 https://doi.org/10.1063/1.98864
State	Published - 1987

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

NREL Publication Number

ACNR/JA-213-9082

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@article{ee57920bfb1f4024af423349607087f8,

title = "Electron Mobility in p-GaAs by Time-of-Flight",

abstract = "The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm-3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and D. Greenberg and J. Schlupmann and Hamaker, {H. C.} and MacMillan, {H. F.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California",

year = "1987",

doi = "10.1063/1.98864",

language = "American English",

volume = "51",

pages = "776--778",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Electron Mobility in p-GaAs by Time-of-Flight

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Greenberg, D.

AU - Schlupmann, J.

AU - Hamaker, H. C.

AU - MacMillan, H. F.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

PY - 1987

Y1 - 1987

N2 - The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm-3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.

AB - The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm-3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.

UR - http://www.scopus.com/inward/record.url?scp=0343287242&partnerID=8YFLogxK

U2 - 10.1063/1.98864

DO - 10.1063/1.98864

M3 - Article

AN - SCOPUS:0343287242

SN - 0003-6951

VL - 51

SP - 776

EP - 778

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Electron Mobility in p-GaAs by Time-of-Flight

Abstract

Bibliographical note

NREL Publication Number

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