Electron Mobility in p-GaAs by Time-of-Flight

R. K. Ahrenkiel, D. J. Dunlavy, D. Greenberg, J. Schlupmann, H. C. Hamaker, H. F. MacMillan

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Abstract

The minority-carrier mobility of electrons in metalorganic chemical vapor deposition grown p-GaAs has been measured by a diffusion time-of-flight technique. Doping levels of 1×1017 and 2×1018 cm-3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority-carrier mobilities are lower than the expected majority-carrier mobilities at the same doping levels. The lower mobility is caused by heavy-hole scattering.

Original languageAmerican English
Pages (from-to)776-778
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number10
DOIs
StatePublished - 1987

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

NREL Publication Number

  • ACNR/JA-213-9082

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