Electron-Spin-Lattice Relaxation in Amorphous Silicon and Germanium

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

@article{3d3718efa2e24c44ba75d19f365c7a11,

title = "Electron-Spin-Lattice Relaxation in Amorphous Silicon and Germanium",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1983",

doi = "10.1103/PhysRevB.28.6256",

language = "American English",

volume = "28",

pages = "6256--6261",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Electron-Spin-Lattice Relaxation in Amorphous Silicon and Germanium

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1983

Y1 - 1983

U2 - 10.1103/PhysRevB.28.6256

DO - 10.1103/PhysRevB.28.6256

M3 - Article

SN - 0163-1829

VL - 28

SP - 6256

EP - 6261

JO - Physical Review B

JF - Physical Review B

IS - 11

ER -