Abstract
Electron spin resonance (ESR) and light-induced electron spin resonance (LESR) measurements were performed on sulfur-doped hydrogenated amorphous silicon (a-SiS:H). At low S doping levels (H2S/SiH4 </- 10-3 in gas phase), the ESR and LESR line shapes are similar to those observed in undoped a-Si:H. The dark spin density generally increases with S doping and reaches 5 x 10(16) cm-3 at H2S/SiH4 isapproximately equal to 10-3. On the other hand, at high S concentration, the dark spin density increases significantly with S concentration. The ESR and LESR line shape become identical and asymmetric, a fact that implies the ESR and LESR signals result from the same kind of ESR center. Since S doping is very inefficient, the ESR signals probably are due to defects instead of trapped carriers inband tails. The asymmetry of the ESR and LESR line shapes at high sulfur concentration may result from either more than one type of defect or an asymmetry in the g tensor of a single defect. The photo-excitation of H-passivated, S-related defects could also contributed to the LESR.
Original language | American English |
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Pages | 103-108 |
Number of pages | 6 |
State | Published - 1997 |
Event | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997 |
Conference
Conference | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium |
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City | San Francisco, California |
Period | 31/03/97 → 4/04/97 |
Bibliographical note
Work performed by University of Utah, Salt Lake City, UtahNREL Publication Number
- NREL/CP-520-24545