Electron Spin Resonance of Hydrogenated Amorphous Silicon Alloyed with Sulfur

    Research output: Contribution to conferencePaper

    Abstract

    Electron spin resonance (ESR) and light-induced electron spin resonance (LESR) measurements were performed on sulfur-doped hydrogenated amorphous silicon (a-SiS:H). At low S doping levels (H2S/SiH4 </- 10-3 in gas phase), the ESR and LESR line shapes are similar to those observed in undoped a-Si:H. The dark spin density generally increases with S doping and reaches 5 x 10(16) cm-3 at H2S/SiH4 isapproximately equal to 10-3. On the other hand, at high S concentration, the dark spin density increases significantly with S concentration. The ESR and LESR line shape become identical and asymmetric, a fact that implies the ESR and LESR signals result from the same kind of ESR center. Since S doping is very inefficient, the ESR signals probably are due to defects instead of trapped carriers inband tails. The asymmetry of the ESR and LESR line shapes at high sulfur concentration may result from either more than one type of defect or an asymmetry in the g tensor of a single defect. The photo-excitation of H-passivated, S-related defects could also contributed to the LESR.
    Original languageAmerican English
    Pages103-108
    Number of pages6
    StatePublished - 1997
    EventAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California
    Duration: 31 Mar 19974 Apr 1997

    Conference

    ConferenceAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
    CitySan Francisco, California
    Period31/03/974/04/97

    Bibliographical note

    Work performed by University of Utah, Salt Lake City, Utah

    NREL Publication Number

    • NREL/CP-520-24545

    Fingerprint

    Dive into the research topics of 'Electron Spin Resonance of Hydrogenated Amorphous Silicon Alloyed with Sulfur'. Together they form a unique fingerprint.

    Cite this