Electron Transport and Band Structure in Phosphorus-Doped Polycrystalline Silicon Films

David L. Young, Howard M. Branz, Fude Liu, Robert Reedy, Bobby To, Qi Wang

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10 Scopus Citations


We study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism which results in an increase in electron mobility from 10% to 80% of the single-crystal silicon mobility as the carrier concentration increases from 1019 to 1020 cm-3. Our measurements of effective mass at the Fermi level indicate that as the carrier concentration increases, there is a shift from impurity-band transport to conduction-band transport, and that the electron effective mass is lower in the impurity band than in the conduction band of Si. The shift to conduction-band transport improves electron mobility with carrier density by improving intragrain carrier mean free path lengths and relaxation times.

Original languageAmerican English
Article numberArticle No. 033715
Number of pages7
JournalJournal of Applied Physics
Issue number3
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-44933


  • basic sciences
  • materials science


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