Abstract
Using the band-structure method, we have studied the electronic and optical properties of the transparent conducting oxides SnZn2O4, SnCd2O4, and CdIn2O4. We analyzed the atomic and orbital characters of the band edge states and explained the general trends observed in the fundamental band gap, the optical band gap, the energy difference between the first and the second conduction bands, and theelectron effective mass. General rules for designing more efficient transparent conducting oxides are proposed.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-37008
Keywords
- atomic
- band edge
- bandgap
- optical property
- orbital
- PV electronic
- transparent conducting oxides (TCO)