Electronic Properties of a-Si:H Deposited with Hydrogen or Helium Dilution

Electronic Properties of a-Si:H Deposited with Hydrogen or Helium Dilution

Research output: Contribution to conference › Paper

Abstract

We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatialdistribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials,which suggest the ratio of charged (D*) density to the neutral defect (D0) density may be altered when growth conditions are varied.

Original language	American English
Pages	363-368
Number of pages	6
State	Published - 1996
Event	Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996

Conference

Conference	Amorphous Silicon Technology 1996: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 12/04/96

Bibliographical note

Work performed by University of Oregon, Eugene, Oregon and Lawrence Berkeley National Laboratory, Berkeley, California

NREL Publication Number

NREL/CP-23022

Cite this

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title = "Electronic Properties of a-Si:H Deposited with Hydrogen or Helium Dilution",

abstract = "We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatialdistribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials,which suggest the ratio of charged (D*) density to the neutral defect (D0) density may be altered when growth conditions are varied.",

author = "NREL",

note = "Work performed by University of Oregon, Eugene, Oregon and Lawrence Berkeley National Laboratory, Berkeley, California; Amorphous Silicon Technology 1996: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

year = "1996",

language = "American English",

pages = "363--368",

}

TY - CONF

T1 - Electronic Properties of a-Si:H Deposited with Hydrogen or Helium Dilution

AU - NREL, null

N1 - Work performed by University of Oregon, Eugene, Oregon and Lawrence Berkeley National Laboratory, Berkeley, California

PY - 1996

Y1 - 1996

N2 - We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatialdistribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials,which suggest the ratio of charged (D*) density to the neutral defect (D0) density may be altered when growth conditions are varied.

AB - We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatialdistribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials,which suggest the ratio of charged (D*) density to the neutral defect (D0) density may be altered when growth conditions are varied.

M3 - Paper

SP - 363

EP - 368

T2 - Amorphous Silicon Technology 1996: Materials Research Society Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Electronic Properties of a-Si:H Deposited with Hydrogen or Helium Dilution

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this